NTD Si材料的微结构研究

NTD Si材料与原始单晶硅相比,其缺陷和位错有所增加,特别是EPR缺陷增加显著,电阻率增加20%左右,150(?)·cm以上的电阻率曲线还存在一个较弱的吸收峰值。辐照处理后的NTD Si材料,其点阵常数普遍增大,111]方向的缺陷明显增多。中照50小时后,局部出现辐照损伤。

The Study on the Microstructure of NTD Si Material

The crystal defects and dislocations for NTD Si materials has therebeen increasing to some extent by comparison with its origenal, especiallyEPR defects increase notable. Specific resistance has been increasing abaut20%, and there's a weaker absorb peak on the curve. The crystal latticeconstant of NTD Si materials raise in common, and the defects on (111) dir-ection increase remarkable after neutron irradiation. Some areas appearirradiation damage after 50 hours by irradiation treatment.