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Ion-implanted GaAs X-band power f.e.t.s |
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| Authors: | Doerbeck F.H. Macksey H.M. Brehm G.E. Frensley W.R. |
| Affiliation: | Texas Instruments Incorporated, Central Research Laboratories, Dallas, USA; |
| Abstract: | Active layers for GaAs power f.e.t.s have been produced by Si implantation into Cr-doped substrates followed by a simple proximity-annealing technique. Devices fabricated on these layers have up to 1.05 W/mm gate width at 10 GHz. This performance is equal to that of epitaxial devices. |
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