A comparative study of n+ ohmic contact resistance forPdInGe and NiGeAu metallizations on GaAs |
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| Authors: | Brooks M.B. Sigmon T.W. |
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| Affiliation: | 2351 Caringa Way, Carlsbad, CA, USA; |
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| Abstract: | NiGeAu and PdInGe metallizations are used for n+ ohmic contacts to GaAs. One-dimensional analytic and two-dimensional numerical analyses are presented using experimental data obtained from transmission line and cross bridge Kelvin test structures. Results from the 1-D and 2-D models show that the former analysis overestimates the specific contact resistance by at least an order of magnitude. This discrepancy is shown to be test structure dependent and metallization independent |
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