| GaAs太阳电池的体电阻及旁路漏电对电池结特性的影响 |
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| 引用本文： | 施小忠,夏冠群.GaAs太阳电池的体电阻及旁路漏电对电池结特性的影响[J].固体电子学研究与进展,1998,18(4):392-398. |
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| 作者姓名： | 施小忠 夏冠群 |
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| 作者单位： | 中国科学院上海冶金研究所!200050 |
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| 摘 要： | 复合电流是液相外延GaAs太阳电池暗电流的主要成分。扫描电镜观察表明,旁路电流主要来源于太阳电池结区的杂质。串联电阻主要来源于电池p型GaAs层的薄层电阻及正面电极的体电阻。串联电阻降低了电池的短路电流,旁路电阻降低了电池的开路电压。减小电池p-GaAs层的薄层电阻是提高电池效率的重要途径。
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| 关 键 词： | 太阳电池 结特性 体电阻 |
The Influence of the Bulk Resistance and Shunt Current on the Characteristics of GaAs Solar Cells |
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| Shi Xiaozhong, Xia Guanqun, Wang Le.The Influence of the Bulk Resistance and Shunt Current on the Characteristics of GaAs Solar Cells[J].Research & Progress of Solid State Electronics,1998,18(4):392-398. |
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| Authors: | Shi Xiaozhong Xia Guanqun Wang Le |
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| Abstract: | The recombination current is the main part of the dark current of LPE GaAs solar cells. The results of SEM show that shunt resistance is due to the impurities in the junction of the solar cells. Series resistance reduces short current and shunt resistance reduces open voltage. Reducing the sheet resistance of the ptype layers of GaAs solar cells is an important way to improve the efficiency of solar cells. |
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| Keywords: | Solar Cell Junction Charactcristic Bulk Resistance |
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