Numerical investigation of characteristics of p-channel Ge/Si hetero-nanocrystal memory |
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Authors: | HG Yang Y Shi L Pu SL GuB Shen P HanR Zhang YD Zhang |
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Affiliation: | Department of Physics and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, People's Republic of China |
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Abstract: | The characteristics of p-channel Ge/Si hetero-nanocrystal based MOSFET memory have been investigated numerically considering mainly hole-tunneling process. Owing to the advantages of a compound potential well and a higher band offset at the valence band compared with the p-channel Si nanocrystal based MOSFET memory and n-channel Ge/Si hetero-nanocrystal based MOSFET memory, the present structure shows that the holes have a longer retention time. Moreover, this kind of device keeps on having high-speed writing/erasing in the direct-tunneling ultrathin oxide regime. It would be expected to solve the contradictory problem between high-speed programming and long retention, therefore, the performance would be substantially improved. |
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Keywords: | 85 30Vw 85 30 De 73 40Gk |
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