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Analysis of the detectivity for triple-layer heterojunction GaSb/GaInAsSb infrared detectors |
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| Authors: | Tian YuanChua Soo Jin Yixin Jin |
| Affiliation: | a Department of Electrical and Computer Engineering, Center for Optoelectronics, National University of Singapore, Singapore 119260 b Institute of Materials Research and Engineering, National University of Singapore, Singapore 119260 c Changchun Institute of Physics, Chinese Academy of Sciences,Changchun 130021, People's Republic of China |
| Abstract: | In this paper, the detectivity is calculated and analyzed with the front-or backside illuminated case for both N-GaSb/p2-Ga0.8In0.2As0.19Sb0.81/p1-Ga0.9In0.1As0.09Sb0.91 and N1-GaSb/n2-Ga0.9In0.1As0.09Sb0.91/p-Ga0.8In0.2As0.19Sb0.81 infrared photovoltaic detectors, respectively. The analysis results show that the main absorption appears in the p-type Ga0.8In0.2As0.19Sb0.81 material with either front- or backside illuminated case for above two structures. In each structure, the carrier concentration obviously affects the detectivity. The carrier concentration in the wide-bandgap material for the isotype heterojunction should be reduced as low as possible to reduce the tunneling rate at the isotype heterointerface. Moreover, the change of the detectivity with the p-side surface recombination velocity for the N1-n2-p structure is more sensitive than that with the p1-side surface recombination velocity for the N-p2-p1 structure. In the N-p2-p1 structure with the incident light from the p1-side surface, two-color detection is achieved. |
| Keywords: | GaInAsSb/GaSb Infrared photodetectors Triple-layer structure Noise mechanisms Detectivity |
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