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Optoelectronic properties of Zn0.52Se0.48/Si Schottky diodes |
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| Authors: | S Venkatachalam Rajendra Kumar D Mangalaraj SaK Narayandass Kyunghae Kim Junsin Yi |
| Affiliation: | aDepartment of Physics, Thin Film Laboratory, Bharathiar University, Coimbatore 641 046, India bSchool of Information and Communication Engineering, Sungkyunkwan University, Suwon, Korea |
| Abstract: | Zn0.52Se0.48/Si Schottky diodes are fabricated by depositing zinc selenide (Zn0.52Se0.48) thin films onto Si(1 0 0) substrates by vacuum evaporation technique. Rutherford backscattering spectrometry (RBS) analysis shows that the deposited films are nearly stoichiometric in nature. X-ray diffractogram of the films reveals the preferential orientation of the films along (1 1 1) direction. Structural parameters such as crystallite size (D), dislocation density (δ), strain (ε), and the lattice parameter are calculated as 29.13 nm, 1.187 × 10?15 lin/m2, 1.354 × 10?3 lin?2 m?4 and 5.676 × 10?10 m respectively. From the I–V measurements on the Zn0.52Se0.48/p-Si Schottky diodes, ideality and diode rectification factors are evaluated, as 1.749 (305 K) and 1.04 × 104 (305 K) respectively. The built-in potential, effective carrier concentration (NA) and barrier height were also evaluated from C–V measurement, which are found to be 1.02 V, 5.907 × 1015 cm?3 and 1.359 eV respectively. |
| Keywords: | Zn0 52Se0 48 thin films Rutherford backscattering spectrometry Zn0 52Se0 48/p-Si heterojunctions Vacuum evaporation Ideality factor Barrier height |
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