A sub‐1V supply CMOS voltage reference generator |
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Authors: | A Tsitouras F Plessas M Birbas J Kikidis G Kalivas |
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Affiliation: | 1. Department of Electrical and Computer Engineering, University of Patras, Patra, Greece;2. Analogies S.A., Patra, Greece;3. Department of Computer and Communication Engineering, University of Thessaly, Volos, Greece |
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Abstract: | An integrated sub‐1V voltage reference generator, designed in standard 90‐nm CMOS technology, is presented in this paper. The proposed voltage reference circuit consists of a conventional bandgap core based on the use of p‐n‐p substrate vertical bipolar devices and a voltage‐to‐current converter. The former produces a current with a positive temperature coefficient (TC), whereas the latter translates the emitter‐base voltage of the core p‐n‐p bipolar device to a current with a negative TC. The circuit includes two operational amplifiers with a rail‐to‐rail output stage for enabling stable and robust operation overall process and supply voltage variations while it employs a total resistance of less than 600 K Ω. Detailed analysis is presented to demonstrate that the proposed circuit technique enables die area reduction. The presented voltage reference generator exhibits a PSRR of 52.78 dB and a TC of 23.66ppm/°C in the range of ? 40 and 125°C at the typical corner case at 1 V. The output reference voltage of 510 mV achieves a total absolute variation of ± 3.3% overall process and supply voltage variations and a total standard deviation, σ, of 4.5 mV, respectively, in the temperature range of ? 36 and 125°C. Copyright © 2011 John Wiley & Sons, Ltd. |
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Keywords: | low power sub‐1V operation bandgap reference temperature stability temperature range temperature coefficient (TC) Power Supply Rejection Ratio (PSRR) weak inversion robustness |
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