| 用于低温环境的铂电阻温度微传感器 |
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| 引用本文： | 梅加兵,刘景全,江水东,杨斌,杨春生.用于低温环境的铂电阻温度微传感器[J].传感器与微系统,2013,32(4). |
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| 作者姓名： | 梅加兵 刘景全 江水东 杨斌 杨春生 |
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| 作者单位： | 上海交通大学微纳科学技术研究院,微米/纳米加工技术国家重点实验室,上海200240 |
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| 摘 要： | 目前,铂电阻温度传感器主要应用于73 K(-200℃)以上环境的温度检测。设计了可用于10 K(-263℃)～200 K(-73℃)低温区的铂电阻温度微传感器。铂电阻温度微传感器采用对称的折回型结构,这种结构有效地降低了交流感抗的影响。传感器的敏感薄膜是一层采用磁控直流溅射沉积厚度为200 nm的铂薄膜。采用QD PPMS仪器测试传感器的电阻与温度的变化关系,得出传感器的电阻温度系数(TCR):研制的温度传感器的电阻温度系数在温度高于30K(-243℃)时可达到9980×10-6/K,同时在低于30K(-243℃)的深低温区域TCR也可达到3730×10-6/K。
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| 关 键 词： | 温度微传感器 微机电系统 铂 低温 |
Pt resistance temperature micro-sensor for low temperature measurement |
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| MEI Jia-bing
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LIU Jing-quan
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JIANG Shui-dong
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YANG Bin
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YANG Chun-sheng.Pt resistance temperature micro-sensor for low temperature measurement[J].Transducer and Microsystem Technology,2013,32(4). |
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| Authors: | MEI Jia-bing LIU Jing-quan JIANG Shui-dong YANG Bin YANG Chun-sheng |
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| Abstract: | Currently Pt resistance temperature sensor is mainly deployed for the measurement of the temperature higher than 73K that is-200 ℃.Pt resistance temperature microsensor for low temperature region range of 10K(-263 ℃) ~200K(-73 ℃)is studied.The symmetrical turn back structure which effectively reduces the influence of impendence of the alternating current(AC)is designed.The Pt film with thickness of 200 nm is deposited by magnetron direct current(DC)sputtering process.The relationship between resistance and temperature of Pt microsensor is characterized by QD PPMS instrument,and TCR can achieve 9 980 ×10-6/K while T>30K(-243 ℃),and 3 730 ×10-6/K while T<30K(-243 ℃)respectively. |
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| Keywords: | temperature microsensor MEMS Pt low temperature |
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