Selective Growth of Vertical-aligned ZnO Nanorod Arrays on Si Substrate by Catalyst-free Thermal Evaporation |
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Authors: | H Wang Z P Zhang X N Wang Q Mo Y Wang J H Zhu H B Wang F J Yang Y Jiang |
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Affiliation: | (1) Faculty of Physics and Electronic Technology, Hubei University, Wuhan, 430062, People’s Republic of China;(2) School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, China |
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Abstract: | By thermal evaporation of pure ZnO powders, high-density vertical-aligned ZnO nanorod arrays with diameter ranged in 80–250 nm
were successfully synthesized on Si substrates covered with ZnO seed layers. It was revealed that the morphology, orientation,
crystal, and optical quality of the ZnO nanorod arrays highly depend on the crystal quality of ZnO seed layers, which was
confirmed by the characterizations of field-emission scanning electron microscopy, X-ray diffraction, transmission electron
microscopy, and photoluminescence measurements. For ZnO seed layer with wurtzite structure, the ZnO nanorods grew exactly
normal to the substrate with perfect wurtzite structure, strong near-band-edge emission, and neglectable deep-level emission.
The nanorods synthesized on the polycrystalline ZnO seed layer presented random orientation, wide diameter, and weak deep-level
emission. This article provides a C-free and Au-free method for large-scale synthesis of vertical-aligned ZnO nanorod arrays
by controlling the crystal quality of the seed layer. |
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Keywords: | ZnO Thermal evaporation Nanorod arrays Seed layer Catalyst-free |
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