Preparation of NiAl2O4/SiO2 and Co2+-Doped NiAl2O4/SiO2 Nanocomposites by the Sol–Gel Route |
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Authors: | I Prakash P Muralidharan N Nallamuthu N Satyanarayana M Venkateswarlu David Carnahan |
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Affiliation: | Department of Physics, Pondicherry University, Pondicherry 605 014, India; Department of Chemical Engineering, NTUST, Taipei, Taiwan; NanoLab Inc. Newton, Massachusetts 02458 |
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Abstract: | NiAl2O4/SiO2 and Co2+-doped NiAl2O4/SiO2 nanocomposite materials of compositions 5% NiO – 6% Al2O3– 89% SiO2 and 0.2% CoO – 4.8% NiO – 6% Al2O3– 89% SiO2, respectively, were prepared by a sol–gel process. NiAl2O4 and cobalt-doped NiAl2O4 nanocrystals were grown in a SiO2 amorphous matrix at around 1073 K by heating the dried gels from 333 to 1173 K at the rate of 1 K/min. The formations of NiAl2O4 and cobalt-doped NiAl2O4 nanocrystals in SiO2 amorphous matrix were confirmed through X-ray powder diffraction, Fourier transform infrared spectroscopy, differential scanning calorimeter, transmission electron microscopy (TEM), and optical absorption spectroscopy techniques. The TEM images revealed the uniform distribution of NiAl2O4 and cobalt-doped NiAl2O4 nanocrystals in the amorphous SiO2 matrix and the size was found to be ~5–8 nm. |
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