| 金刚石薄膜高温器件 |
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| 引用本文： | 杨国伟.金刚石薄膜高温器件[J].微电子学,1993,23(3):41-47. |
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| 作者姓名： | 杨国伟 |
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| 作者单位： | 航空航天部第014中心 河南洛阳，471009 |
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| 摘 要： | 本文详细地论述了低压气相生长的金刚石薄膜作为一种新型半导体材料的研究进展,讨论了金刚石薄膜与金属的欧姆接触和整流接触,以及可以在高温区工作的金刚石薄膜Schottky二极管和MESFET器件。最后,讨论了目前金刚石薄膜作为半导体材料所遇到的两个尚无法实现的问题:n型掺杂和异质外延单晶膜的生长。
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| 关 键 词： | 金刚石薄膜 半导体材料 半导体器件 |
Diamond Film based Devices for High-Temperature Applications |
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| Yang Guowei
No. Center. Ministry of Aviation and Astronautics,Luogang,Henan.Diamond Film based Devices for High-Temperature Applications[J].Microelectronics,1993,23(3):41-47. |
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| Authors: | Yang Guowei
No Center Ministry of Aviation and Astronautics Luogang Henan |
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| Affiliation: | Yang Guowei
No. 014 Center. Ministry of Aviation and Astronautics,Luogang,Henan,471009 |
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| Abstract: | Advances in the development of CVD diamond films to be used as a novel semiconductor material are reviewed in the paper. The ohmic contacts and rectifying contacts between diamond films and metals are discussed. Diamond film based Schottky diodes and MESFET's are described. It is concluded that the n-type doping and the growth of het-eroepitaxial single crystal diamond films, which remain unsolved, are very important for broad applications of diamond films to microelectronics. |
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| Keywords: | Diamond film Semiconductor material High temperature semiconductor device |
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