MOS characteristics of substituted Al gate on high-/spl kappa/ dielectric |
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| Authors: | Chang Seo Park Byung Jin Cho Dim-Lee Kwong |
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| Affiliation: | Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore; |
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| Abstract: | Substituted aluminum (SA) metal gate on high-/spl kappa/ gate dielectric is successfully demonstrated. Full substitution of polysilicon with Al is achieved for a Ti-Al-polysilicon-HfAlON gate structure by a low-temperature annealing at 450/spl deg/C. The SA gate on HfAlON dielectric shows a very low work function of 4.25eV, which is well suitable for bulk nMOSFETs. The SA process is fully free from the Fermi-level pinning problem. In addition, the SA process also shows improved uniformity in leakage current distribution compared to fully silicided metal gate. |
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