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加入支撑墙的FED的电场分布及电子轨迹数值模拟
引用本文:于宏宇,罗淑云,葛常锋,刘珩.加入支撑墙的FED的电场分布及电子轨迹数值模拟[J].微细加工技术,2000(2):19-23.
作者姓名:于宏宇  罗淑云  葛常锋  刘珩
作者单位:清华大学电子工程系,北京,100084
摘    要:FED内部真空中的电场和电子运动受到支撑结构的影响,为此采用了有限元法计算带有介质支撑墙的FED电场分布;采用龙格-库塔法计算该空间电子轨迹。并且在考虑了介质支撑墙上的二次电子发射之后。定性的分析了空间电场电子轨迹及墙上的电荷积累情况。得出了支撑墙对FEA电子轨迹影响的数值结果,对器件的设计提出了建议。

关 键 词:场致发射显示器  支撑墙  电场分布  电子轨迹
文章编号:1003-8213(2000)02-0004-05
修稿时间:1999-10-08

Numerical Simulation of Electric Field and Electron Trajectory in FED with Spacers
YU Hong-Yu,LUO Shu-yun,GE Chang-feng,LIU Heng.Numerical Simulation of Electric Field and Electron Trajectory in FED with Spacers[J].Microfabrication Technology,2000(2):19-23.
Authors:YU Hong-Yu  LUO Shu-yun  GE Chang-feng  LIU Heng
Affiliation:YU Hong-Yu ,LUO Shu-yun ,GE Chang-feng ,LIU Heng ;(Dept of Electronic Engineering, Tsinghua University, Beijing 100084,China)
Abstract:The electric field and electron movement in the vacuum space of FED device are effected by the spacers. Considering the exising of the spacers. The distribution of electric field is simulated with Finite Element Method. The trajectory of electrons is given by computing with Runge Dutta Method. Meanwhile the charge accumulation upon the spacers and the change of the electric field and the trajectory of electrons are analyzed considering the secondary electron emission. The result of the effect on the trajectory from spacers is obtained and new structure of the device with the spacers is suggested.
Keywords:FED (Field Emission Display)  Spacer  Secondary Electron Emission
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