Quantum efficiency of silicon photodiodes in the near-infrared spectral range |
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Authors: | Hicks Chris Kalatsky Mark Metzler Richard A Goushcha Alexander O |
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Affiliation: | Semicoa Incorporated, 333 McCormick Avenue, Costa Mesa, California 92626, USA. |
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Abstract: | The quantum efficiency of silicon photodiodes and factors that might be responsible for the drop in quantum efficiency in the near-infrared spectral range were analyzed. It was shown that poor reflectivity from the rear surface of the die could account for a decrease in Si photodiode quantum efficiency in near-infrared spectral range by more than 20%. The photodiode quantum efficiency was modeled with an appropriate representation for the carrier-collection efficiency dependence on the die penetration depth. A corrected analytical expression for calculating the photodiode quantum efficiency is given. Some methods to improve the quantum efficiency of silicon photodiodes in near-infrared spectral range are discussed. |
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