Calculation of emissivity of Si wafers |
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Authors: | Bhushan Sopori Wei Chen Jamal Madjdpour N M Ravindra |
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Affiliation: | (1) National Renewable Energy Laboratory, 1617 Cole Boulevard, 80401 Golden, CO;(2) New Jersey Institute of Technology, 07102 Newark, NJ |
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Abstract: | A computer-software, Emissivity, has been developed to calculate the emissivity (ɛ) of silicon wafers of any surface morphology, for a given temperature and dopant concentration. The software uses a combination
of ray- and wave-optics approaches to include the interference and the polarization effects necessary for multilayer surface
coatings and multi-reflections within thin wafers. The refractive index and the absorption coefficient are calculated as a
function of temperature and dopant concentration using an empirical model for an indirect bandgap semiconductor. The results
of this model are compared with conventional emissivity calculations and experimental data. |
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Keywords: | Emissivity temperature dopant concentration silicon multilayer |
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