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Calculation of emissivity of Si wafers
Authors:Bhushan Sopori  Wei Chen  Jamal Madjdpour  N M Ravindra
Affiliation:(1) National Renewable Energy Laboratory, 1617 Cole Boulevard, 80401 Golden, CO;(2) New Jersey Institute of Technology, 07102 Newark, NJ
Abstract:A computer-software, Emissivity, has been developed to calculate the emissivity (ɛ) of silicon wafers of any surface morphology, for a given temperature and dopant concentration. The software uses a combination of ray- and wave-optics approaches to include the interference and the polarization effects necessary for multilayer surface coatings and multi-reflections within thin wafers. The refractive index and the absorption coefficient are calculated as a function of temperature and dopant concentration using an empirical model for an indirect bandgap semiconductor. The results of this model are compared with conventional emissivity calculations and experimental data.
Keywords:Emissivity  temperature  dopant concentration  silicon  multilayer
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