SU-8胶微结构的显影技术研究

突破了传统深宽比概念,提出金属基底上基于图形特征的光刻胶显影技术,对采用SU-8胶加工高分辨率和高深宽比微结构的显影工艺进行了讨论,分析了120～340μm厚具有不同图形特征的SU-8胶显影规律,认为在同样条件下,凸型图形显影效果优于凹型非连通性图形;曲线型显影效果优于直线型图形与点状图形;圆弧连接的图形显影效果优于尖角型图形。显影时辅助适当功率的超声搅拌显著改善图形质量,凸型结构最佳超声功率小于10W;凹型结构超声功率为15W左右;深宽比为5～7的凸型胶膜结构适宜显影时间为10min以内,凹型结构显影时间达25min。

Research on the Development Technique of SU-8 Resist Microstructure

By Breaking through the tradition concept, the photoresist development technique based on the graphic feature of microstructure was put forward. The development process of the high resolute and high aspect ratio microstructure with SU-8 resist on the metal substrate was discussed, and the development rule of resist with different graphic feature and thicknesses from 120-340 μm was analysed. It can be concluded that the development of protruding structure is better than that of concave structure, the development of curve structure is more excellent than that of beeline or dot shape structure, and the development of graph quality with fillet feature is better than that of the acute angle at the same condition. A ultrasound stirring with a proper power will benefit to the development quality. The results show that the optimal ultrasound power is less than 10 W for the protruding structure, and is 15 W for the concave structure. The development time is 10 min for the protruding structure with aspect ratio 5-7, and is 25 min for the concave structure.