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High temperature carbon implantation in SIMOX |
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| Authors: | A Nejim P L Hemment J Stoemenos |
| Affiliation: | a Department of Electronics and Electrical Engineering, University of Surrey, Guildford, Surrey GU25XH, UK b Physics Department, Aristotle University of Thessaloniki, 54006, Thessaloniki, Greece |
| Abstract: | The aim of this experiment was to explore the possibility to convert the Si-overlayer of a SIMOX wafer into 3C-SiC by carbon implantation. In a first attempt carbon was implanted at a temperature 1030°C and energy 100 keV to a dose of 2.5 × 1017 C+ cm?2. The SIMOX was covered by a thick thermal oxide. Cross-section TEM observations on the implanted specimen reveal that carbon is concentrated mainly at the Si/SiO2 interfaces at the front and back face of the Si-overlayer forming continuous but highly defected 3C-SiC layers which are in epitaxial relation with the Si matrix. The implanted carbon has the tendency to migrate from the SiO2 and Si to the SiO2/Si interfaces to form SiC there. |
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