| 基于平面肖特基二极管的毫米波固定调节式谐波混频器 |
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| 引用本文： | 姚常飞,周明,罗运生,王毅刚,许从海.基于平面肖特基二极管的毫米波固定调节式谐波混频器[J].半导体学报,2012,33(11):115007-5. |
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| 作者姓名： | 姚常飞 周明 罗运生 王毅刚 许从海 |
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| 作者单位： | Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016, China;Department of Microwave and Millimeter Wave Modules, Nanjing Electronic Devices Institute, Nanjing 210016, China;Department of Microwave and Millimeter Wave Modules, Nanjing Electronic Devices Institute, Nanjing 210016, China;Department of Microwave and Millimeter Wave Modules, Nanjing Electronic Devices Institute, Nanjing 210016, China;Department of Microwave and Millimeter Wave Modules, Nanjing Electronic Devices Institute, Nanjing 210016, China;Department of Microwave and Millimeter Wave Modules, Nanjing Electronic Devices Institute, Nanjing 210016, China |
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| 摘 要： | 基于GaAs肖特基势垒二极管，研制出了两个不同波段的谐波混频器。在场仿真软件中，二极管的非线性结采用lumped端口来模拟，通过场分析方法分析二极管各端口的阻抗。谐波混频电路被分成不同部分来单独优化设计，基于优化设计的各独立电路，建立谐波混频器的整体场仿真模型，通过提取相应的S参数文件分析混频器的变频损耗。150GHz 谐波混频器测得最低变频损耗10.7dB，在135-165GHz变频损耗典型值为12.5dB。180GHz 谐波混频器测得最低变频损耗5.8dB，在165-200GHz变频损耗典型值为13.5dB，在210-240GHz变频损耗典型值为11.5dB。
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| 关 键 词： | 肖特基二极管 谐波混频器 平面 毫米波 调谐 全球电路 频率范围 GHz |
| 修稿时间： | 6/10/2012 1:48:15 PM |
Millimeter-wave fixed-tuned subharmonic mixers with planar Schottky diodes |
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| Yao Changfei,Zhou Ming,Luo Yunsheng,Wang Yigang and Xu Conghai.Millimeter-wave fixed-tuned subharmonic mixers with planar Schottky diodes[J].Chinese Journal of Semiconductors,2012,33(11):115007-5. |
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| Authors: | Yao Changfei Zhou Ming Luo Yunsheng Wang Yigang and Xu Conghai |
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| Affiliation: | Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016, China;Department of Microwave and Millimeter Wave Modules, Nanjing Electronic Devices Institute, Nanjing 210016, China;Department of Microwave and Millimeter Wave Modules, Nanjing Electronic Devices Institute, Nanjing 210016, China;Department of Microwave and Millimeter Wave Modules, Nanjing Electronic Devices Institute, Nanjing 210016, China;Department of Microwave and Millimeter Wave Modules, Nanjing Electronic Devices Institute, Nanjing 210016, China;Department of Microwave and Millimeter Wave Modules, Nanjing Electronic Devices Institute, Nanjing 210016, China |
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| Abstract: | Two different frequency bandwidth subharmonic mixers (SHM) using planar Schottky mixing diodes are discussed and fabricated. Full-wave analysis is carried out to find the optimum diode embedding impedances with a lumped port for modeling the nonlinear junction. The SHM circuit is divided into several different parts and each part is optimized using the calculated diode impedances. The divided parts are then combined and optimized together. The exported S-parameter files of the global circuit are used for conversion loss (CL) discussion. For the 150 GHz SHM, the lowest measured CL is 10.7 dB at 153 GHz, and typical CL is 12.5 dB in the frequency range of 135-165 GHz. The lowest measured CL of the 180 GHz SHM is 5.8 dB at 240 GHz, and typical CL is 13.5 dB and 11.5 dB in the frequency range of 165-200 GHz and 210-240 GHz, respectively. |
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| Keywords: | millimeter wave planar Schottky diodes subharmonic mixer conversion losses |
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