| Trench SJ IGBT 的仿真研究 |
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| 引用本文： | 王波,谈景飞,张文亮,褚为利,朱阳军.Trench SJ IGBT 的仿真研究[J].半导体学报,2012,33(11):114002-5. |
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| 作者姓名： | 王波 谈景飞 张文亮 褚为利 朱阳军 |
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| 作者单位： | Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China |
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| 基金项目： | 国家重大科技专项(NO. 2011ZX02504-002) |
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| 摘 要： | 本文对沟槽型超结绝缘栅双极晶体管(trench SJ IGBT)进行了全面的分析,并通过Sentaurus TCAD仿真软件将其与沟槽型场截止绝缘栅双极晶体管(trench FS IGBT)进行了详尽的对比,仿真结果显示,在相同的条件下与trench FS IGBT 相比,trench SJ IGBT 的击穿电压提高了100 V,饱和导通压降降低了0.2 V,关断损耗减少了50%。最后,文章研究了电荷不平衡对trench SJ IGBT 的动静态参数的影响。对各参数和它们对电荷不平衡的灵敏度之间的折中进行了讨论。
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| 关 键 词： | IGBT 仿真结果 沟槽 绝缘栅双极晶体管 击穿电压 关断损耗 动态特性 不平衡 |
| 收稿时间： | 4/19/2012 5:01:47 PM |
| 修稿时间： | 5/31/2012 3:42:49 PM |
A simulation study on a novel trench SJ IGBT |
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| Wang Bo,Tan Jingfei,Zhang Wenliang,Chu Weili and Zhu Yangjun.A simulation study on a novel trench SJ IGBT[J].Chinese Journal of Semiconductors,2012,33(11):114002-5. |
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| Authors: | Wang Bo Tan Jingfei Zhang Wenliang Chu Weili and Zhu Yangjun |
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| Affiliation: | Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China |
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| Abstract: | An overall analysis of the trench superjunction insulated gate bipolar transistor (SJ IGBT) is presented and a detailed comparison between a trench SJ IGBT and a trench field stop IGBT is made by simulating with Sentaurus TCAD. More specifically, simulation results show that the trench SJ IGBT exhibits a breakdown voltage that is raised by 100 V while the on-state voltage is reduced by 0.2 V. At the same time, the turn-off loss is decreased by 50%. The effect of charge imbalance on the static and dynamic characteristics of the trench SJ IGBT is studied, and the trade-off between parameters and their sensitivity versus charge imbalance is discussed. |
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| Keywords: | IGBT superjunction SJBT charge imbalance on-state voltage breakdown voltage turn-off loss |
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