| 基于介电泳技术制备SiC纳米线薄膜晶体管 |
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| 引用本文： | 戴振清,张丽英,陈长鑫,钱炳建,徐东,陈海燕,魏良明,张亚非.基于介电泳技术制备SiC纳米线薄膜晶体管[J].半导体学报,2012,33(11):114001-6. |
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| 作者姓名： | 戴振清 张丽英 陈长鑫 钱炳建 徐东 陈海燕 魏良明 张亚非 |
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| 作者单位： | Key Laboratory for Thin Film and Microfabrication of the Ministry of Education, Research Institute of Micro and Nano Science and Technology, Shanghai Jiao Tong University, Shanghai 200240, China;Department of Physics and Chemistry, Hebei Normal University of Science and Technology, Qinhuangdao 066004, China;Key Laboratory for Thin Film and Microfabrication of the Ministry of Education, Research Institute of Micro and Nano Science and Technology, Shanghai Jiao Tong University, Shanghai 200240, China;Key Laboratory for Thin Film and Microfabrication of the Ministry of Education, Research Institute of Micro and Nano Science and Technology, Shanghai Jiao Tong University, Shanghai 200240, China;Key Laboratory for Thin Film and Microfabrication of the Ministry of Education, Research Institute of Micro and Nano Science and Technology, Shanghai Jiao Tong University, Shanghai 200240, China;Key Laboratory for Thin Film and Microfabrication of the Ministry of Education, Research Institute of Micro and Nano Science and Technology, Shanghai Jiao Tong University, Shanghai 200240, China;Key Laboratory for Thin Film and Microfabrication of the Ministry of Education, Research Institute of Micro and Nano Science and Technology, Shanghai Jiao Tong University, Shanghai 200240, China;Key Laboratory for Thin Film and Microfabrication of the Ministry of Education, Research Institute of Micro and Nano Science and Technology, Shanghai Jiao Tong University, Shanghai 200240, China;Key Laboratory for Thin Film and Microfabrication of the Ministry of Education, Research Institute of Micro and Nano Science and Technology, Shanghai Jiao Tong University, Shanghai 200240, China |
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| 摘 要： | 本文从理论和实验两方面，研究了介电泳技术中SiC纳米线溶剂的选择。从介电泳力、介电泳力矩、溶剂的挥发性和毒性角度分析，发现异丙醇是合适的SiC纳米线溶剂。以异丙醇作为溶剂，利用介电泳技术实现了SiC纳米线的定向排列，并得到纳米线薄膜。SiC纳米线溶液浓度分别为0.1μg/μL，0.3μg/μL， 0.5μg/μL时，得到定向排列纳米线的密度分别为 2/μm，4/μm，6/μm。并且利用密度为6/μm的SiC纳米线薄膜制备了晶体管，该晶体管的迁移率为13.4 cm2/V?s。
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| 关 键 词： | 硅纳米线 薄膜晶体管 SiC 制造 电泳工艺 溶剂选择 移动设备 介电 |
| 修稿时间： | 6/10/2012 4:10:25 PM |
Fabrication of SiC nanowire thin-film transistors using dielectrophoresis |
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| Dai Zhenqing,Zhang Liying,Chen Changxin,Qian Bingjian,Xu Dong,Chen Haiyan,Wei Liangming and Zhang Yafei.Fabrication of SiC nanowire thin-film transistors using dielectrophoresis[J].Chinese Journal of Semiconductors,2012,33(11):114001-6. |
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| Authors: | Dai Zhenqing Zhang Liying Chen Changxin Qian Bingjian Xu Dong Chen Haiyan Wei Liangming and Zhang Yafei |
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| Affiliation: | Key Laboratory for Thin Film and Microfabrication of the Ministry of Education, Research Institute of Micro and Nano Science and Technology, Shanghai Jiao Tong University, Shanghai 200240, China;Department of Physics and Chemistry, Hebei Normal University of Science and Technology, Qinhuangdao 066004, China;Key Laboratory for Thin Film and Microfabrication of the Ministry of Education, Research Institute of Micro and Nano Science and Technology, Shanghai Jiao Tong University, Shanghai 200240, China;Key Laboratory for Thin Film and Microfabrication of the Ministry of Education, Research Institute of Micro and Nano Science and Technology, Shanghai Jiao Tong University, Shanghai 200240, China;Key Laboratory for Thin Film and Microfabrication of the Ministry of Education, Research Institute of Micro and Nano Science and Technology, Shanghai Jiao Tong University, Shanghai 200240, China;Key Laboratory for Thin Film and Microfabrication of the Ministry of Education, Research Institute of Micro and Nano Science and Technology, Shanghai Jiao Tong University, Shanghai 200240, China;Key Laboratory for Thin Film and Microfabrication of the Ministry of Education, Research Institute of Micro and Nano Science and Technology, Shanghai Jiao Tong University, Shanghai 200240, China;Key Laboratory for Thin Film and Microfabrication of the Ministry of Education, Research Institute of Micro and Nano Science and Technology, Shanghai Jiao Tong University, Shanghai 200240, China;Key Laboratory for Thin Film and Microfabrication of the Ministry of Education, Research Institute of Micro and Nano Science and Technology, Shanghai Jiao Tong University, Shanghai 200240, China |
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| Abstract: | |
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| Keywords: | dielectrophoresis SiC nanowires thin-film transistors |
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