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Purification of metallurgical grade silicon by a solar process |
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| Authors: | G Flamant V Kurtcuoglu J Murray A Steinfeld |
| Affiliation: | aProcesses, Materials and Solar Energy Laboratory (PROMES)-CNRS, 7 rue du four solaire, Odeillo, 66120 Font Romeu, France1;bDepartment of Mechanical and Process Engineering, ETH-Swiss Federal Institute of Technology Zurich, 8092 Zurich, Switzerland1;cSolar Technology Laboratory, Paul Scherrer Institute, 5232 Villigen, Switzerland |
| Abstract: | The purification of upgraded metallurgical silicon by extraction of boron and phosphorus was experimentally demonstrated using concentrated solar radiation in the temperature range 1550–1700 °C. The process operated with a flow of Ar at reduced pressure (0.05 atm) for elimination of P, and with a flow of H2O for elimination of B. Impurity content decreased by a factor of 3 after a 50-min solar treatment, yielding Si samples with final average content of 2.1 ppmw B and 3.2 ppmw P. |
| Keywords: | Solar chemistry PV silicon Purification of silicon Silicon metallurgy Solar thermal process |
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