| 一种新的T型栅加工技术 |
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| 引用本文： | 贾海强,李效白. 一种新的T型栅加工技术[J]. 微纳电子技术, 1996, 0(4) |
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| 作者姓名： | 贾海强 李效白 |
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| 作者单位： | 电子部第１３研究所 |
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| 摘 要： | 研制出的ＰＨＥＭＴ采用一种新的０．１μｍＴ型栅制备方法。将薄膜的纵向可控变为横向可控，应用这一原理，对时间等参量进行控制，获得了０．１～０．３μｍ微细金属栅条，此工艺应用于３ｍｍＰＨＥＭＴ器件研制，器件的直流跨导大于４００ｍＳ／ｍｍ，微波性能在４０ＧＨｚ时，Ｇａｍａｘ达５．６７ｄＢ，特征频率ｆＴ可外推至７４ＧＨｚ，最高振荡频率ｆｍａｘ可达１３０ＧＨｚ。
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| 关 键 词： | T型栅，PHEMT |
A New Technology of 0.1 μm PHEMT |
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| Jia Haiqiang,Li Xiaobai. A New Technology of 0.1 μm PHEMT[J]. Micronanoelectronic Technology, 1996, 0(4) |
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| Authors: | Jia Haiqiang Li Xiaobai |
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| Abstract: | We have fabricated a PHEMT with 0.1μm mushroom gate by a new method.With parameter control such as time by transverse control of gate length,We have obtained 0.1～0.3μm mushroom gate.The developed device has an average transconductances across a wafer in excess of 400mS/mm, and its Gamax reaches 5.67dB at 40GHz,With f_T=74GHz and f_max=130GHz. |
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| Keywords: | T gate PHEMT |
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