Activation of p-type conduction in ZnO:N films by annealing in atomic oxygen |
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| Authors: | I. V. Rogozin A. N. Georgobiani M. B. Kotlyarevsky V. I. Demin L. S. Lepnev |
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| Affiliation: | 1124. Berdyansk State Pedagogical University, ul. Shmidta 4, Berdyansk, 71118, Ukraine
2124. Lebedev Institute of Physics, Russian Academy of Sciences, Leninskii pr. 53, Moscow, 119991, Russia
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| Abstract: | ZnO:N epitaxial films have been grown by reactive magnetron sputtering. The effect of annealing in atomic oxygen on the structural and electrical properties of the ZnO:N films has been studied by X-ray diffraction, atomic force microscopy, Hall effect measurements, and X-ray photoelectron spectroscopy. By annealing at temperatures from 500 to 700°C, we have obtained p-type ZnO:N films with a resistivity of ～57 Ω cm, hole mobility of ～2.7 cm2/(V s), and hole concentration of ～6.8 × 1017 cm?3. X-ray photoelectron spectroscopy results suggest that the p-type conductivity of the films is due to a decrease in the concentration of (N2)O and V O donors. |
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