| 垂直腔激光器中弛豫振荡频率的优化控制 |
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| 引用本文： | 潘炜,张晓霞,罗斌. 垂直腔激光器中弛豫振荡频率的优化控制[J]. 激光与红外, 2002, 32(1): 27-29 |
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| 作者姓名： | 潘炜 张晓霞 罗斌 |
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| 作者单位： | 1. 西南交通大学计算机与通信工程学院,四川,成都,610031
2. 电子科技大学光电子技术系,四川,成都,610054 |
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| 基金项目： | 国家自然科学基金资助项目 (10 1740 5 7) |
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| 摘 要： | 从垂直腔面发射的半导体激光器（VCSELs）的结构出发，利用增益与载流子密度的广义对数关系，借助小信号分析法，推出了直接调制情形下驰豫振荡频率的严格解析关系。分析指出，量子阱器件的光子寿命并非越短越好，欲提高VCSELs的驰豫振荡频率，除了增加注入电流，提高微分增益等基本途径外，控制器件的结构参数可使驰豫振荡频率达到极大值。同时，自发辐射因子的可控性，以及降低稳态载流子密度，也都是提高VCSELs驰豫振荡频率和拓宽调制带宽的有效措施。
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| 关 键 词： | 半导体激光器 垂直腔 驰豫振荡效率 优化控制 |
| 文章编号： | 1001-5078(2002)01-0027-03 |
| 修稿时间： | 2001-07-30 |
Optimal Control Relaxation Oscillations Frequency for Vertical Cavity Lasers |
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| PAN Wei ,ZHANG Xiao xia ,LUO Bin. Optimal Control Relaxation Oscillations Frequency for Vertical Cavity Lasers[J]. Laser & Infrared, 2002, 32(1): 27-29 |
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| Authors: | PAN Wei ZHANG Xiao xia LUO Bin |
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| Affiliation: | PAN Wei 1,ZHANG Xiao xia 2,LUO Bin 1 |
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| Abstract: | The dependence of the modulation response of a vertical cavity surface emitting semiconductor lasers (VCSELs) on its parameter is investigated subject to direct current modulation. A rate equation model is developed, with changing the logarithmic relation of gain on carrier density, to analyze the relaxation oscillations frequency behavior of VCSELs. It has been proved that there exists the maximum relaxation oscillations frequency for an optimal device structures parameter. Analysis shows that decrease the carrier density and increase spontaneous emission factor to increase relaxation oscillations frequency, expect increases between current numerical value and differential gain of VCSELs. |
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| Keywords: | semiconductor lasers vertical cavity relaxation oscillations frequency modulation bandwidth |
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