An AlxGa1-xSb avalanche photodiode with again bandwidth product of 90 GHz |
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| Authors: | Kuwatsuka H Mikawa T Miura S Yasuoka N Tanahashi T Wada O |
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| Affiliation: | Fujitsu Labs. Ltd., Atsugi; |
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| Abstract: | An AlxGa1-xSb avalanche photodiode (APD) with an Al composition of 0.05 has been fabricated and tested. The measured gain-bandwidth (GB) product of the highly doped diode is 90 GHz. Such a large GB product has never been previously achieved by any APD materials sensitive in the long-wavelength region. This suggests the advantage of the AlxGa1-xSb material system for very high-speed operation |
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