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Pyroelectric Ta-modified LiNbO3 thin films and devices for thermal infrared detection |
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| Authors: | MC Kao HZ Chen PT Hsieh |
| Affiliation: | a Department of Electronic Engineering, Hsiuping Institute of Technology, Taichung 412, Taiwan b Department of Electrical Engineering, Hsiuping Institute of Technology, Taichung 412, Taiwan c Department of Electrical Engineering, National Sun Yat-Sen University, Kaohsiung 804, Taiwan |
| Abstract: | High-performance pyroelectric infrared (IR) detectors have been fabricated using tantalate-doped lithium niobate LiNb1 − xTaxO3 (abbreviated as LNT, with x = 0-1.0) thin films deposited on Pt(111)/Ti/SiO2/Si(100) substrates by diol-based sol-gel processing, in which, tantalate (Ta) is adopted as dopant in lithium niobate. The randomly oriented LNT thin film exhibits a relatively small dielectric constant and a large pyroelectric coefficient. The pyroelectric characteristics of detectors with various tantalate contents, as a function of modulation frequency, were investigated. It was found that LiNb0.8Ta0.2O3 had the largest voltage responsivity of 7020 (V/W) at 70 Hz, and a specific detectivity (D?) of 7.76 × 107 cm Hz1/2/W at 200 Hz. These results indicate that the LNT thin film with x = 0.20 is most suitable for application as high-performance pyroelectric thin-film detectors. |
| Keywords: | IR detector LiNbO3 Pyroelectric Voltage responsivity Specific detectivity |
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