Large area depositon of Cd1-xZnxTe on GaAs and Si substrates by metalorganic chemical vapor deposition |
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Authors: | N. H. Karam R. Sudharsanan A. Mastrovito M. M. Sanfacon F. T. J. Smith M. Leonard N. A. El-Masry |
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Affiliation: | (1) Spire Corporation, One Patriots Park, 01730 Bedford, MA;(2) Loral Infrared & Imaging Systems, 02173 Lexington, MA;(3) North Carolina State University, 27695 Raleigh, NC |
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Abstract: | Results of large-area (up to 1000 cm2/run) Cd1-xZnxTe heteroepitaxy on both GaAs and GaAs/Si substrates by metalorganic chemical vapor deposition (MOCVD) are presented. Cd1-xZnxTe (x = 0-0.1) films exhibited specular surface morphology, 1% thickness uniformity (standard deviation), and compositional uniformity (Δx) of ±0.002 over 100 mm diam substrates. For selected substrate orientations and deposition conditions, the only planar defects exhibited by (lll)B Cd1-xZnxTe/GaAs/Si films were lamella twins parallel to the CdTe/GaAs interface; these do not propagate through either the Cd1-xZnxTe layer or subsequently deposited liquid phase epitaxy (LPE) HgCdTe layer(s). Background Ga and As-impurity levels for Cd1-xZnxTe on GaAs/Si substrates were below the secondary ion mass spectroscopy detection limit. Preliminary results of HgCdTe liquid phase epitaxy using a Te-rich melt on Si-based substrates resulted in x-ray rocking curve linewidths as narrow as 72 arc-sec and etch-pit densities in the range 1 to 3 x 106 cm2. |
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Keywords: | CdZnTe/GaAs CdZnTe/GaAs/Si GaAs/Si CdZnTe Heteroepitaxy HgCdTe |
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