| CIGS太阳能电池缓冲层ZnS薄膜的制备与表征 |
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| 引用本文： | 王世成,杨永刚,果世驹,倪沛然.CIGS太阳能电池缓冲层ZnS薄膜的制备与表征[J].通信电源技术,2008,25(1):66-68. |
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| 作者姓名： | 王世成 杨永刚 果世驹 倪沛然 |
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| 作者单位： | 1. 北京科技大学材料学院,北京,100083
2. 无锡爱芯科微电子有限公司,江苏无锡,214028 |
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| 摘 要： | 以硫酸锌、(NH4)2S2O3混合溶液为前驱体溶液,加入少量的柠檬酸钠和丙三醇为络合剂和分散剂,采用化学浴沉积法在玻璃衬底上成功制备了表面均匀的ZnS薄膜。研究了沉积时间和退火时间对ZnS薄膜质量的影响,并运用扫描电镜(SEM)、X射线衍射(XRD)、紫外-可见光光度计对薄膜进行分析和表征。结果表明:在沉积时间为90m in,退火温度为200℃时制得的薄膜性能较好,晶体结构为纤锌矿结构。制备的薄膜透过率(λ>400nm)约为80%,薄膜的禁带宽度约为3.75eV。通过添加少量的分散剂丙三醇可以改善ZnS薄膜质量。退火温度为300℃,薄膜表面形貌均匀致密。
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| 关 键 词： | ZnS薄膜 化学浴沉积法 X射线衍射 紫外-可见光光度计 |
| 文章编号： | 1009-3664(2008)01-0066-03 |
| 修稿时间： | 2007年9月25日 |
Preparation and Characterization of ZnS Buffer Layers for Cu(In,Ga)Se2 Thin Film Solar Cells |
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| WANG Shi-cheng,YANG Yong-gang,GUO Shi-ju,LI Pei-ran.Preparation and Characterization of ZnS Buffer Layers for Cu(In,Ga)Se2 Thin Film Solar Cells[J].Telecom Power Technologies,2008,25(1):66-68. |
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| Authors: | WANG Shi-cheng YANG Yong-gang GUO Shi-ju LI Pei-ran |
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| Affiliation: | WANG Shi-cheng1; YANG Yong-gang1; GUO Shi-ju1; LI Pei-ran2(1.University of Science and Technology; Beijing 100083; China; 2.Wuxi Asic Micro Electronics Co.Ltd.; Wuxi 214028; China); |
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| Abstract: | ZnS thin films were prepared on glass sides by chemical bath deposition(CBD),using zinc sulfate and(NH4)2S2O3 as precursor aqueous solutions,a little amount of sodium citrate is used as complexing agent and glycerol as disperse agent,the surfaces of deposited thin films were homogeneous.The quality of ZnS films formed at various deposition times and anneals temperatures is studied.The properties of ZnS thin films were investigated by SEM、XRD、UV-Vis spectra.The results of analyses show that α-ZnS structure t... |
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| Keywords: | ZnS thin films chemical bath deposition（CBD） XRD UV-Vis spectra |
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