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利用多阱结构改善有机电致发光器件效率
引用本文:时玉萌,邓振波,徐登辉,肖静. 利用多阱结构改善有机电致发光器件效率[J]. 光电子.激光, 2007, 18(2): 171-174
作者姓名:时玉萌  邓振波  徐登辉  肖静
作者单位:北京交通大学光电子技术研究所,发光与光信息教育部重点实验室,北京,100044;北京交通大学光电子技术研究所,发光与光信息教育部重点实验室,北京,100044;北京交通大学光电子技术研究所,发光与光信息教育部重点实验室,北京,100044;北京交通大学光电子技术研究所,发光与光信息教育部重点实验室,北京,100044
基金项目:北京科技计划资助项目 , 胜利油田管理局科研资助项目
摘    要:将N,N'-bis-(1-naphthy1)-N,N'-dipheny-1,1'bipheny1 4,4'-diamine(NPB)与bathocuproine(BCP)2种材料以交叠沉积方式组成一种周期性结构作为空穴注入层,制备了结构为ITO/[NPB/BCP]n/AlQ/LiF/Al的有机电致发光器件(OLED).通过改变空穴注入层阱状结构的重复周期数n,可改变载流子复合区域,进而获得近白光和绿光发射.由于该结构能获得更好的载流子注入平衡,具有交叠结构空穴注入层的近白光器件在15 V时亮度达到3 433.8 cd/m2,在电流密度为60.9 mA/cm2时最大发光效率为2.26 cd/A.当周期数n大于3时得到绿光发射,与单空穴注入层ITO/NPB/AlQ/LiF/Al器件相比,交叠空穴注入层可将器件的最大亮度由2 512.8 cd/m2提高到866 1.0 cd/m2,最大亮度效率在20 mA/cm2时达到4.94 cd/A.

关 键 词:有机电致发光器件(OLED)  载流子  空穴注入  器件的性能
文章编号:1005-0086(2007)02-0171-04
收稿时间:2006-04-08
修稿时间:2006-04-082006-06-09

The Luminance Efficiency Improvement of Organic Light Emitting Diode Using Multiple-quantum-well Structure
SHI Yu-meng,DENG Zhen-bo,XU Deng-hui,XIAO Jing. The Luminance Efficiency Improvement of Organic Light Emitting Diode Using Multiple-quantum-well Structure[J]. Journal of Optoelectronics·laser, 2007, 18(2): 171-174
Authors:SHI Yu-meng  DENG Zhen-bo  XU Deng-hui  XIAO Jing
Affiliation:Key Laboratory of Luminescence and Optical Information, Ministry of Education,Institute of Optoelectronic Tech nology, Beijing Jiaotong University, Beijing 100044,China
Abstract:Organic light-emitting diodes(OLEDs)with multiple-quantum-well structures,which consist of acromatic diamine and bathocuproine have been fabricated.The structure of the device is ITO/[NPB/BCP]n/AlQ/LiF/Al.The effect of the multiple-quantum-well(MQW)structure on the performance of OLEDs with tris(8-hydroxyquinoline)aluminum as the emitting material has been investigated.The emitting zone can be changed with the number of MQW.The maximum brightness of white emitting device reaches 3 433.8 cd/m2.The luminous efficiency is 2.26 cd/A at the current density of 60.9 mA/cm2.The brightness of the diode with the MQW number of 5 has been reached 866 1.0 cd/m2 with respect to 2 512.8 cd/m2 of the conventional green emitting diode without the MQW structure(ITO/NPB/AlQ/LiF/Al).The highest luminous efficiency is 4.94 cd/A at the current density of 20 mA/cm2.Such an improvement in the device performance should be attributed to the improved hole-electron balance,which can be further attributed to the introduction of the MQW structure.
Keywords:organic light-emitting diodes(OLED)  carrier  hole injection  performance of devices
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