Transmission electron microscopy observations of misfit dislocations in GaAsP epitaxial films

Transmission electron microscopy observations have been made of misfit dislocation structures in GaAsP epitaxial films in foils both parallel to (1) the interface between the epitaxial film and the substrate and (2) the {1 1 1} glide planes. These observations support a near surface source mechanism of dislocation multiplication for relief of the epilayer misfit. It is also suggested that the recently observed surface reconstruction in the III-V compounds might allow for an easier nucleation of dislocations at the surface than hitherto thought. Furthermore, an efficient Lomer dislocation has been observed forming from two 60° glide dislocations thus supporting the hypothesis that all dislocations found in these foils, including the sessile Lomer type, originate from a glide process.