Formation of a step-free InAs quantum well selectively grown on a GaAs (111)B substrate |
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Authors: | Toshio Nishida Naoki Kobayashi |
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Affiliation: | (1) NTT Basic Research Laboratories, 3-1, Morinosato Wakamiya, Atsugi-shi, 243-01 Kanagawa, Japan |
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Abstract: | We investigated the possibility of forming a step-free quantum well structure. A step-free InAs monolayer was grown on a selectively
grown mesa by controlling surface phases with in-situ monitoring of surface photo-absorption. We selectively grew a GaAs buffer
at 800°C and cooled the sample keeping the (2×2)-like As stabilized surface. Atomic force microscopy (AFM) observation demonstrated
that fully step-free surfaces were formed on the 8 μm wide mesa. Then, a monolayer-thick InAs was formed on this step-free
surface and this InAs layer was capped by GaAs under the (2×2)-like condition. The quantum level of the step-free InAs layer
was evaluated by spatially resolved photoluminescence (μPL) measurement. Uniform PL intensity and the lack of a double layer
peak indicated the formation of a step-free InAs quantum well, which was in good agreement with AFM observation. |
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Keywords: | (111)B GaAs metalorganic vapor phase epitaxy (MOVPE) selective growth surface photo-absorption two-dimensional nucleation |
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