Formaldehyde gas sensor based on TiO2 thin membrane integrated with nano silicon structure |
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Authors: | ZHENG Xuan MING An-jie YE Li CHEN Feng-hu SUN Xi-long LIU Wei-bing LI Chao-bo OU Wen WANG Wei-bing CHEN Da-peng |
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Affiliation: | School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;Smart Sensing Research and Development Centre, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;Laboratory of Advanced Polymer Materials, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China;Laboratory of Advanced Polymer Materials, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China;School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;Smart Sensing Research and Development Centre, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;Smart Sensing Research and Development Centre, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;Smart Sensing Research and Development Centre, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;Smart Sensing Research and Development Centre, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;Smart Sensing Research and Development Centre, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China |
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Abstract: | An innovative formaldehyde gas sensor based on thin membrane type metal oxide of TiO2 layer was designed and fabricated. This sensor under ultraviolet (UV) light emitting diode (LED) illumination exhibits a higher response to formaldehyde than that without UV illumination at low temperature. The sensitivities of the sensor under steady working condition were calculated for different gas concentrations. The sensitivity to formaldehyde of 7.14 mg/m3 is about 15.91 under UV illumination with response time of 580 s and recovery time of 500 s. The device was fabricated through micro-electro-mechanical system (MEMS) processing technology. First, plasma immersion ion implantation (PIII) was adopted to form black polysilicon, then a nanoscale TiO2 membrane with thickness of 53 nm was deposited by DC reactive magnetron sputtering to obtain the sensing layer. By such fabrication approaches, the nanoscale polysilicon presents continuous rough surface with thickness of 50 nm, which could improve the porosity of the sensing membrane. The fabrication process can be mass-produced for the MEMS process compatibility. |
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