| 不同射频溅射功率下直接制备Ca_2Si薄膜(英文) |
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| 引用本文： | 杨吟野,谢泉,王义,曾正,罗胜耘.不同射频溅射功率下直接制备Ca_2Si薄膜(英文)[J].测试技术学报,2009,23(5):402-406. |
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| 作者姓名： | 杨吟野 谢泉 王义 曾正 罗胜耘 |
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| 作者单位： | 1. 贵州民族学院物理系,贵州,贵阳,550025
2. 贵州大学电子科学与信息技术学院,贵州,贵阳,550025 |
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| 基金项目： | National Natural Science Foundation of China，the Foundation of Science Technology Department of Guizhou Province(，the Key Foundation of Education Department of Guizhou(2006212).The specific Foundation of the High-level Talents of Guizhou Province |
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| 摘 要： | 磁控溅射系统在恒定Ar气压和Ar气流流量下,使用不同射频溅射功率在Si(100)衬底上分别沉积Ca薄膜;随后,800℃真空退火1 h.立方相的Ca2Si薄膜首次、单独、直接生长在Si(100)衬底上.实验结果指出,在多相共生的Ca-Si化合物中,沉积Ca薄膜时的射频溅射功率影响了立方相Ca2Si薄膜的质量;最优化的溅射功率是85 W.另外,退火温度为800℃时,有利于单一相Ca2Si的独立生长.并且,退火时间也是关键因素.
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| 关 键 词： | 射频溅射 形核 退火 半导体硅化物 |
Directly Grown Ca_2Si Films on Si(100) Substrate at Various Radio-Frequency Sputtering Power |
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| YANG Yinye,XIE Quan,WANG Yi,ZENG Zheng,LUO Shengyun.Directly Grown Ca_2Si Films on Si(100) Substrate at Various Radio-Frequency Sputtering Power[J].Journal of Test and Measurement Techol,2009,23(5):402-406. |
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| Authors: | YANG Yinye XIE Quan WANG Yi ZENG Zheng LUO Shengyun |
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| Affiliation: | YANG Yinye1,XIE Quan2,WANG Yi2,ZENG Zheng1,LUO Shengyun1 (1.Dept.of Physics,Guizhou University for Ethnic Minorities,Guiyang 550025,China,2.College of Electronic Science & Information Technology,Guizhou University,China) |
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| Abstract: | Ca films were directly deposited on Si(100) substrates by Radio Frequency (R. F.) magnetron sputtering system (MS) under the different sputtering power and subsequent were annealed at 800 ℃ for lh in a vacuum furnace. The structural and morphological features of the resultant films were tested by XRD, FT-IR, SEM and EDAX. The cubic phase Ca2Si film was grown directly and individually on Si(100) substrate for the first time. The experimental result indicate that the selective growth of a single phase Ca-silicide in Ca-Si system of the existence of multiple silicide phases depends on sputtering conditions, annealing temperature and annealing time. The optimal sputtering power is 85 W for the cubic phase Ca2Si film growth. Besides, 800 ℃ is the adaptive annealing temperature for Ca2Si film growth. Additionally, annealing time is also a principal factor for CazSi film growth. |
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| Keywords: | Ca2Si Ca2Si R F MS nucleation annealing semiconducting silicides |
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