| 铁电薄膜及铁电存储器的研究进展 |
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| 引用本文： | 周益春,唐明华.铁电薄膜及铁电存储器的研究进展[J].材料导报,2009,23(9). |
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| 作者姓名： | 周益春 唐明华 |
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| 作者单位： | 湘潭大学低维材料及其应用技术教育部重点实验室,湘潭,411105 |
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| 基金项目： | 高等学校科技创新工程重大项目，国家自然科学基金 |
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| 摘 要： | 铁电薄膜是具有铁电性且厚度尺寸为数纳米到数微米的薄膜材料,因其在非挥发性铁电随机存储器方面的潜在应用而受到广泛关注.综述了新型无铅、无疲劳Bi4Ti3O12(BIT)基铁电薄膜材料的制备和改性及性能表征方法,阐述了铁电薄膜的3种失效机制及铁电薄膜存储器的研究现状,最后提出了铁电薄膜及存储器今后可能的研究方向.
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| 关 键 词： | 铁电薄膜 掺杂改性 失效机制 铁电薄膜存储器 |
Advances in Research on Ferroelectric Thin Films and Ferroelectric Memory |
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| ZHOU Yichun,TANG Minghua.Advances in Research on Ferroelectric Thin Films and Ferroelectric Memory[J].Materials Review,2009,23(9). |
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| Authors: | ZHOU Yichun TANG Minghua |
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| Affiliation: | ZHOU Yichun,TANG Minghua(Key Laboratory of Low Dimensional Materials & Application Technology of Ministry of Education,Xiangtan University,Xiangtan 411105) |
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| Abstract: | Ferroelectric thin films with ferroelectricity and the thickness ranging from nanometers to micrometers have attracted a great deal of attention for the potential applications in non-volatile ferroelectric random access memory(FeRAM).The preparation and modification of Bi4Ti3O12(BIT)-based ferroelectric films with lead-free chemical composition and excellent fatigue-free property and three failure mechanisms are analysed.The current research status of the ferroelectric memory are illustrated in this review.... |
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| Keywords: | ferroelectric thin film modification failure mechanism ferroelectric memory |
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