| 提高晶闸管di/dt能力的研究 |
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| 引用本文： | 高占成,潘福泉,关艳霞. 提高晶闸管di/dt能力的研究[J]. 电源世界, 2014, 0(5): 44-47,39 |
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| 作者姓名： | 高占成 潘福泉 关艳霞 |
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| 作者单位： | [1]北京东菱宏博电气科技发展有限公司 [2]沈阳工业大学信息科学与工程学院 |
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| 摘 要： | 从di/dt损坏机制、定量公式入手,分析了国内外有关di/dt的著作、文章,研究了提高晶闸管器件di/dt能力的各种有效方法,给出了一个常规新设计及其研究成果。
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| 关 键 词： | 晶闸管 di/dt能力 放大门极 短路点 扩展速度 |
The Research on the Enhancement of Thyristor di/dt |
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| Gao Zhancheng,Pan Fuquan,Guan Yanxia. The Research on the Enhancement of Thyristor di/dt[J]. the world of power supply, 2014, 0(5): 44-47,39 |
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| Authors: | Gao Zhancheng Pan Fuquan Guan Yanxia |
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| Affiliation: | 1. Beijing Dongling Hongbo Electric Technology Development Co. LTD; 2. Shenyang Polytechnic University Information Science and Engineering College) |
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| Abstract: | From di/dt damage mechanism and the quantitative formula, the paper analyses some abroad, and it studies various effective ways to raise the di/dt ability of the thyristor device, and study results. works, articles of di/dt both at home and gives a regular new design as well as its study results. |
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| Keywords: | Thyristor, di/dt Ability Enlarged gate pole, Short dot, Developed speed |
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