| 不同碳化硅器件的直接比较 |
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| 引用本文： | 张惠惠,周新田,穆辛. 不同碳化硅器件的直接比较[J]. 电源世界, 2014, 0(7): 35-39 |
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| 作者姓名： | 张惠惠 周新田 穆辛 |
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| 作者单位： | 北京工业大学电控学院 |
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| 摘 要： | 本文介绍了意法半导体公司(STMicroelectronics)首次提出的1200V/20A的SiC MOSFET,并与1200V常闭型SiC JFET(结型场效应晶体管)和1200V SiC BJT(双极结型晶体管)作对比。全面比较了3种开关器件工作在T=25℃、电流变化范围(1A~7A)的动态特性,并在T=125℃、ID=7A条件下做了快速评估。尽管SiC MOSFET的比通态电阻(Ron*A)很高,但与另外两种器件相比仍被认为是最有前景的开关器件:SiC MOSFET的总动态损耗远远低于SiC BJT和常闭型SiC JFET,且驱动方案非常简单。因此在高频、高效功率转换领域中,SiC MOSFET是最好的选择。
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| 关 键 词： | SiC MOSFET SiC JFET SiC BJT |
Direct Comparison Among Different Technologies in Silicon Carbide |
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| Translated by Zhang Huihui,Zhou Xintian,Mu Xin. Direct Comparison Among Different Technologies in Silicon Carbide[J]. the world of power supply, 2014, 0(7): 35-39 |
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| Authors: | Translated by Zhang Huihui Zhou Xintian Mu Xin |
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| Affiliation: | , Proofread by Hu Dongqing (College of Electronic Information and Control Engineering, Beijing University of Technology) |
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| Abstract: | This paper introduces 1200V/20A SiC MOSFET first proposed by STMicroelectronics, compared with 1200V normally closed SiC JFET and 1200V SiC BJT. Their dynamic characteristics are completely compared under the condition of T=25℃ and current range （1A-7A） and rapid assessment is made under the condition of T=125℃ and ID=7A. Compared with the other two devices, SiC MOSFET is still regarded as the most promising switch device, though its Ron＊A is really high. The total dynamic loss of SiC MOSFET is much less than SiC BJT and normally closed SiC JFET. What＇ s rnore, its driving scheme is very simple. Therefore, in the area of power conversion with high frequency and high efficiency, SiC MOSFET must be the best choice. |
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| Keywords: | SiC MOSFET SiC JFET SiC BJT |
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