Monolithic integration of GaInAsP/InP carrier depletion directionalcouplers and GaInAs p-i-n detectors on semi-insulating InP |
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| Authors: | Renaud M. Vinchant J.F. Jarry P. Le Bris J. Provost J.G. Cavailles J.A. Erman M. |
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| Affiliation: | Alcatel Alsthom Recherche, Marcoussis; |
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| Abstract: | Monolithic integration of two optical switches consisting in carrier depletion directional couplers based on GaInAsP/InP double heterostructure waveguides, with two GaInAs p-i-n detectors has been realized on semi-insulating InP. Packaged devices based on 2 mm coupling length directional couplers exhibit a switching voltage of -15 V and a 3 dB cutoff frequency of 1.3 GHz. Also, total fiber-to-fiber insertion loss of only 16 dB is achieved without any antireflection coating |
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