铟掺杂ZnO体单晶的生长及其性质

研究了In掺杂n型zno体单晶的化学气相传输法生长和材料性质.利用霍尔效应、x射线光电子能谱、光吸收谱、喇曼散射、阴极荧光谱等手段对晶体的特性和缺陷进行r分析.掺In后容易获得浓度为1018～lO19cm-3的n型ZnO单晶,掺人杂质的激活效率很高.随着掺杂浓度的提高,znO单晶的带边吸收和电学性质等发生明显的变化.分析了掺In-ZnO单晶的缺陷及其对材料性质的影响.

Bulk Single Crystal Growth and Properties of In-Doped ZnO

The Hall effect,XPS,optical absorption,Raman scattering,and cathode luminescence have been used to study the electrical properties,crystal quality,and defects of indium-doped bulk ZnO single crystals grown by the chemical vapor transport (CVT) method.Indium doped n-type ZnO single crystals with a carrier concentration of 1E18~1E19cm-3 have been obtained reproducibly by CVT.The doped indium exhibits high activation efficiency as a shallow donor in a ZnO single crystal.As doping concentration increases,the optical absorption and electrical properties of the In-ZnO change significantly.Defects and their influence on the In-ZnO single crystals have been analyzed.