Investigation of the crystal structure and electrical properties of La3+-doped SrBi2Ta2O9 ceramics |
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Authors: | Jingsong Liu Shuren Zhang Chengtao Yang |
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Affiliation: | (1) School of Micro and Solid Electronics, University of Electronic Science and Technology of China, Chengdu, People's Republic of China |
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Abstract: | The layered-perovskite ferroelectric ceramics of La3+-doped SrBi2Ta2O2 (SBT), with the chemical formula of SrBi(2 - x)LaxTa2O9 (SBLT), have been prepared by the conventional mixed-oxide method. The effect of substitution of La3+ for Bi3+ in the crystal structure and electrical properties of SBT ceramics was explored with the aid of X-ray diffraction, (T) curve and ferroelectric hysteresis loop measurements. The electrical properties such as dielectric constant () and remanent polarization (Pr) showed a dependence on the crystal structure, and both reached maxima of 243 and 25 C cm–2, respectively, with 6 at % La3+ substitution, accompanying the greatest structure change. Theoretical considerations were presented to suggest that the atomic displacements and the crystal deformation implied by the crystal structure change are responsible for the improvement of electrical properties. On the other hand, degradation of fatigue resistance was observed in SBLT ceramics, which is believed to be caused by the chemical environment change of the perovskite layers arising from La3+ substitution on Bi3+ sites. |
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