利用可控In气氛下热处理工艺制备Cd0．9Zn0．1Te：In

利用控制In气氛下的热处理工艺成功地制备了CdZnTe：In。不同In压下（Cd，Zn分压保持在平衡分压）的热处理实验结果表明：热处理后样品的电阻率可从6．75×10^5Ω·cm提高到10^8～10^1010Ω·cm；并且随着In压的增加，导电类型逐渐由p型转变为n型。热处理后样品的电阻率变化特征可以由In的扩散和施主缺陷InCd、受主缺陷VCd之间的补偿作用来很好地解释。利用扩散理论建立了CdZnTe：In的电阻率物理模型。利用热处理后样品的电阻率数据，计算了在873，973和1073K时In原子在CZT晶体中的有效扩散系数DIn，分别为3．455×10^-11，2．625×10^-10和5．17×10^-9cm^2／s。将扩散数据经过拟合后得到了DIn的表达式：1．35exp（-1．85eV／kT）cm^2／s（873～1073K）。

Fabrication of Cd0.9Zn0.1Te:In by Thermal Annealing Technology under Controlled Indium Vapor

In-diffused Cd0.9Zn0.1Te (CZT:In) was fabricated by thermal annealing under controlled Indium vapor. Anneal experiments were done under different pIn and pCd/pZn being kept at equilibrium partial pressure. The experimental results p-type to n-type with pIn increasing. The behavior of the resistivity curves could be explained well by the In diffusion and the compensation between donor defect (InCd) and acceptor defect (VCd). The resistivity model of CdZnTe slice after annealing was subsequently founded. Based on the above electrical data DIn under 873 K, 973 K and 1073 K was calculated to be 3.455× 10-11, 2.625 × 10-10 and 5.17 × 10-9 cm2/s, respectively. The expression of DIn was achieved by data fitting: 1.35exp(-1.85eV/kT)cm2/s (873～1073 K).