量子阱态光电子谱研究的理论模型

近年来，光电子谱被广泛应用于薄膜中量子阱态的研究。为解释薄膜中分立的量子阱态和薄膜的光电子谱间的关系，发展了一些理论模型。介绍了近自由电子模型、相位积累模型和电子干涉模型等关于薄膜中量子阱态的理论模型，并用它们解释了量子阱态在光电子谱中峰位和线宽．线宽由准粒子寿命的倒数Γ以及电子在表面和界面反射系数的和R决定，电子波矢κ以及电子在表面和界面相位移之和Φ决定了峰的位置。

Theory models for quantum well states in photoemission spectroscopy

Recently, photoemission spectroscopy has been widely used for the study of quantum well states (QWS) in films, several models have been developed to explain the relationship of the discrete quantum well states and photoemission spectroscopy. Three theoretical models, nearly free electron model, phase accumulation model, and electron interferometer model, are introduced. Using these models, linewidth and energy position of peaks in photoemission spectroscopy can be explained. The linewidth is determined by the inverse lifetime г of quasiparticle and the reflectivities R at the surface and interface, while the peak position is determined by the wave vector k and total phase shift Ф due to reflection at the surface and interface.