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Sol–gel derived N-doped ZnO thin films |
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| Authors: | Hongen Nian Sung Hong Hahn Kee-Kahb Koo Eun Woo Shin Eui Jung Kim |
| Affiliation: | aDepartment of Chemical Engineering, University of Ulsan, Ulsan 680-749, South Korea;bDepartment of Physics, University of Ulsan, Ulsan 680-749, South Korea;cDepartment of Chemical and Biomolecular Engineering and Interdisciplinary Program of Integrated Biotechnology, Sogang University, Seoul 121-741, South Korea |
| Abstract: | N-doped ZnO (NZO) thin films have been prepared by a sol–gel method and their electrical and optical properties have been investigated. The prepared NZO films were p-type, and had excellent electrical properties. They had an optical transparency above 85% in the visible range. The UV absorption edge was red-shifted with increasing N-doping concentration. Two emission bands were observed in the photoluminescence (PL) spectra, with one band located in the UV range and the other band consisting of green luminescence. Both UV and green emissions were enhanced with increasing N-doping concentration. |
| Keywords: | Electrical properties Optical materials and properties Sol– gel preparation N-doped ZnO |
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