InAsSbP-InAsSb-InAs diode lasers emitting at 3.2 /spl mu/m grown by metal-organic chemical vapor deposition |
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| Authors: | D Wu E Kaas J Diaz B Lane A Rybaltowski HJ Yi M Razeghi |
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| Affiliation: | Center for Quantum Devices, Northwestern Univ., Evanston, IL, USA; |
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| Abstract: | InAsSb-InAsSbP double heterostructure diode lasers have been grown by metal-organic chemical vapor deposition on (100) InAs substrates. High-output powers of 660 mW in pulse mode and 300 mW in continuous wave operation with 400-/spl mu/m cavity length and 100-/spl mu/m-wide aperture at 78 K have been obtained. These devices showed low threshold current density of 40 A/cm/sup 2/, low internal loss of 3.0 cm/sup -1/, far-field /spl theta//sub /spl perp// of 34/spl deg/ with differential efficiency of 90% at 78 K, and high operating temperatures of 220 K. |
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