Barrier modification of Au/n-GaAs Schottky diode by swift heavy ion irradiation |
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| Authors: | AT Sharma Shahnawaz YS Katharria |
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| Affiliation: | a Department of Physics and Astrophysics, University of Delhi, New Delhi 110 007, India
b Inter-University Accelerator Centre, P.O. Box 10502, New Delhi 110 067, India |
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| Abstract: | The effect of swift heavy ion (72.5 MeV 58Ni6+) irradiation on Au/n-GaAs Schottky barrier characteristics is studied using in situ current-voltage measurements. Diode parameters are found to vary as a function of ion irradiation fluence. The Schottky barrier height (SBH) is found to be 0.55(±0.01) eV for the as deposited diode, which decreases with ion irradiation fluence. The SBH decreases to a value of 0.49(±0.01) eV at the highest ion irradiation fluence of 5 × 1013 ions cm−2. The ideality factor is found to be 2.48 for unirradiated diode, and it increases with irradiation to a value of 4.63 at the highest fluence. The modification in Schottky barrier characteristics is discussed considering the energy loss mechanism of swift heavy ion at the metal-semiconductor interface. |
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| Keywords: | 71 20 Nr 71 55 Eq 72 20 &minus i 73 20 &minus r 73 20 At 73 40 Sx |
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