The electrical characteristics of Sn/methyl-red/p-type Si/Al contacts |
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Authors: | M.E. Ayd?n,A. Tü rü t |
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Affiliation: | a University of Dicle, Faculty of Science and Arts, Department of Physics, Diyarbak?r, Turkey b Atatürk University, Faculty of Sciences and Arts, Department of Physics, 25240 Erzurum, Turkey |
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Abstract: | The junction characteristics of the organic compound methyl-red film (2-[4-(dimethylamino)phenylazo]benzoic acid) on a p-type Si substrate have been studied. The current-voltage characteristics of the device have rectifying behavior with a potential barrier formed at the interface. The barrier height and ideality factor values of 0.73 eV and 3.22 for the structure have been obtained from the forward bias current-voltage (I-V) characteristics. The interface state energy distribution and their relaxation time have ranged from 1.68 × 1012 cm−2 eV−1 and 1.68 × 10−3 s in (0.73-Ev) eV to 1.80 × 1012 cm−2 eV−1 and 5.29 × 10−5 s in (0.43-Ev) eV, respectively, from the forward bias capacitance-frequency and conductance-frequency characteristics. Furthermore, the relaxation time of the interface states shows an exponential rise with bias from (0.43-Ev) eV towards (0.73-Ev) eV. |
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Keywords: | 73.61.Ph 73.40.Lq 73.40.Ei 73.40.Qv 73.40.Ty 73.40.Rw 73.40.Ns 73.30.+y 61.82.Fk |
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