Selective etching of (Ba,Sr)TiO3 thin films over silicon in an inductively coupled plasma |
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Authors: | Gwan-Ha Kim |
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Affiliation: | School of Electrical and Electronics Engineering, Chung-Ang University, 221 Heukseok-Dong, Dongjak-Gu, Seoul 156-756, Republic of Korea |
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Abstract: | In this work, we investigated etching characteristics of BST thin films and higher selectivity of BST over Si using inductive coupled O2/Cl2/Ar plasma (ICP) system. The maximum etch rate of BST thin films and selectivity of BST over Si were 61.5 nm/min at a O2 addition of 1 sccm, 9.52 at a O2 addition of 4 sccm into the Cl2(30%)/Ar(70%) plasma, respectively. Plasma diagnostics was performed by Langmuir probe (LP), optical emission spectroscopy (OES) and quadrupole mass spectrometry (QMS). These results confirm that the increased etch rates at O2 addition of 1 sccm is the result of the enhanced chemical reaction between BST and Cl radicals and an ion bombardment effect. |
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Keywords: | (Ba,Sr)TiO3 Selective etching OES QMS Langmuir probe |
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