Source/drain extension region engineering in nanoscale double gate SOI MOSFETs: Novel design methodology for low-voltage analog applications |
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Authors: | Abhinav Kranti G Alastair Armstrong |
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Affiliation: | Northern Ireland Semiconductor Research Centre (NISRC), School of Electrical and Electronic Engineering, Queen’s University Belfast, Ashby Building, Stranmillis Road, Belfast BT9 5AH, Northern Ireland, United Kingdom |
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Abstract: | The present paper proposes for the first time, a novel design methodology based on the optimization of source/drain extension (SDE) regions to significantly improve the trade-off between intrinsic voltage gain (AVO) and cut-off frequency (fT) in nanoscale double gate (DG) devices. Our results show that an optimally designed 25 nm gate length SDE region engineered DG MOSFET operating at drain current of 10 μA/μm, exhibits up to 65% improvement in intrinsic voltage gain and 85% in cut-off frequency over devices designed with abrupt SDE regions. The influence of spacer width, lateral source/drain doping gradient and symmetric as well as asymmetrically designed SDE regions on key analog figures of merit (FOM) such as transconductance (gm), transconductance-to-current ratio (gm/Ids), Early voltage (VEA), output conductance (gds) and gate capacitances are examined in detail. The present work provides new opportunities for realizing future low-voltage/low-power analog circuits with nanoscale SDE engineered DG MOSFETs. |
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Keywords: | Nanoscale double gate SOI MOSFET Source/drain extension region engineering Low-voltage/low-power analog applications Intrinsic voltage gain Early voltage Transconductance-to-current ratio Gate capacitances Cut-off frequency |
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