On the profile of frequency dependent series resistance and dielectric constant in MIS structure |
| |
Authors: | ? Yüceda? A Tataro?lu |
| |
Affiliation: | Department of Physics, Faculty of Arts and Sciences, Gazi University, 06500 Ankara, Turkey |
| |
Abstract: | In this study, the frequency dependent of the forward and reverse bias capacitance-voltage (C-V) and conductance-voltage (G/ω - V) measurements of Al/SiO2/p-Si (MIS) structures are carried out in frequency range of 10 kHz-10 MHz. The frequency dependence of series resistance (Rs), density of surface states (Nss), dielectric constant (ε′), dielectric loss (ε″), dielectric loss tangent (tan δ) and the ac electrical conductivity (σdc) are studied for these structure at room temperature. Experimental results show that both electrical and dielectric parameters were strongly frequency and voltage dependent. The ε′ and ε″ are found to decrease with increasing frequency while σac is increased. Also, both the effects of surface states Nss and Rs on C-V and G/ω - V characteristics are investigated. It has been seen that the measured C and G decrease with increasing frequency due to a continuous distribution of Nss in frequency range of 10 kHz-1 MHz. The effect of Rs on the C and G are found noticeable at high frequencies. Therefore, the high frequencies C and G values measured under both reverse and forward bias were corrected for the effect of series resistance Rs to obtain real MIS capacitance Cc and conductance Gc using the Nicollian and Goetzberger technique. The distribution profile of Rs-V gives a peak in the depletion region at low frequencies and disappears with increasing frequencies. |
| |
Keywords: | MIS diode Electrical and dielectric properties Frequency dependence Insulator layer Surface states Series resistance |
本文献已被 ScienceDirect 等数据库收录! |
|