Dependence of electrical properties on interfacial layer of Ta2O5 films |
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| Authors: | Jae-Woong Lee Wan-Joo Maeng Jae-Min Myoung |
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| Affiliation: | a Information and Electronic Materials Research Laboratory, Department of Materials Science and Engineering, Yonsei University, 134 Shinchon-Dong, Seoul 120-749, Republic of Korea
b Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang 790-784, Republic of Korea |
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| Abstract: | The change in the thickness and chemical states of the interfacial layer and the related electrical properties in Ta2O5 films with different annealing temperatures were investigated. The high-resolution transmission electron microscopy and X-ray photoelectron spectroscopy analyses revealed that the 700 °C-annealed Ta2O5 film remained to be amorphous and had the thinnest interfacial layer which was caused by Ta-silicate decomposition to Ta2O5 and SiO2. In addition, the electrical properties were improved after annealing treatments. Our results suggest that an annealing treatment at 700 °C results in the highest capacitance and the lowest leakage current in Ta2O5 films due to the thinnest interfacial layer and non-crystallization. |
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| Keywords: | 77 55 +f 73 61 Ng 68 55 Jk 82 80 Pv 68 37 Lp |
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